general description product summary v ds i d (at v gs =10v) 70a r ds(on) (at v gs =10v) < 3.1m r ds(on) (at v gs =4.5v) < 4.8m application 100% uis tested 100% rg tested orderable part number package type form minimum order quantity 30v ? trench power alphamos ( mos lv) technology ? low r ds(on) ? low gate charge ? high current capability ? rohs and halogen-free compliant absolute maximum ratings t a =25c unless otherwise noted aod538 to-252 tape & reel 2500 ? dc/dc converters in computing, servers, and pol ? isolated dc/dc converters in telecom and industrial AOI538 to-251a tube 4000 g d s to252 dpak to-251a ipak symbol v ds v gs i dm i as avalanche energy l=0.1mh c e as v ds spike v spike t j , t stg symbol t 10s steady-state steady-state r q jc t a =25c t a =70c t c =25c t c =100c t c =25c avalanche current c continuous drain current thermal characteristics parameter max t a =70c 4 c units junction and storage temperature range -55 to 175 typ p dsm w t a =25c 6.2 power dissipation a maximum junction-to-ambient a c/w r q ja 15 40 20 w i d v a 36 a 280 i dsm 27 mj 65 34 70 v a absolute maximum ratings t a =25c unless otherwise noted 20 v maximum units maximum junction-to-case c/w c/w maximum junction-to-ambient a d 1.3 50 1.6 power dissipation b 46 t c =100c 10 s p d 30 36 93 gate-source voltage pulsed drain current c 54 parameter drain-source voltage continuous drain current g AOI538 1 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification top view bottom view g s d g s d g g d d s s to p view bottom view
symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 1.4 1.8 2.2 v 2.5 3.1 t j =125c 3.6 4.5 3.8 4.8 m g fs 91 s v sd 0.7 1 v i s 70 a c iss 2160 pf c oss 915 pf c rss 115 pf r g 0.9 1.8 2.7 q g (10v) 30 42 nc q g (4.5v) 14 20 nc q gs 5.1 nc q gd 6.3 nc t d(on) 8 ns t r 4 ns t d(off) 29 ns t f 5.5 ns m v gs =10v, v ds =15v, i d =20a total gate charge electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions gate resistance f=1mhz i dss a zero gate voltage drain current drain-source breakdown voltage id=250 a, vgs=0v r ds(on) static drain-source on-resistance gate source charge gate drain charge total gate charge switching parameters turn-on delaytime v ds =0v, v gs =20v maximum body-diode continuous current g input capacitance gate-body leakage current turn-off delaytime turn-off fall time v gs =10v, v ds =15v, r l =0.75 w , r gen =3 w diode forward voltage dynamic parameters v gs =4.5v, i d =20a turn-on rise time reverse transfer capacitance v gs =0v, v ds =15v, f=1mhz v ds =v gs, i d =250 m a output capacitance forward transconductance i s =1a,v gs =0v v ds =5v, i d =20a v gs =10v, i d =20a t f 5.5 ns t rr 16.5 ns q rr 34.2 nc body diode reverse recovery charge body diode reverse recovery time i f =20a, di/dt=500a/ m s turn-off fall time i f =20a, di/dt=500a/ m s a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r q ja t 10s and the maximum allowed junction temperature o f 150 c. the value in any given application depends on the user's specific board design, and th e maximum temperature of 175 c may be used if the pcb allows it. b. the power dissipation p d is based on t j(max) =175 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. single pulse width limited by junction temperatu re t j(max) =175 c. d. the r q ja is the sum of the thermal impedance from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =175 c. the soa curve provides a single pulse rating. g. the maximum current rating is package limited. h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. AOI538 2 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
typical electrical and thermal characteristics 0 20 40 60 80 100 0 1 2 3 4 5 6 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 0 1 2 3 4 5 6 0 5 10 15 20 25 30 r ds(on) (m w w w w ) i d (a) figure 3: on - resistance vs. drain current and gate 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 200 normalized on-resistance temperature (c) figure 4: on - resistance vs. junction temperature v gs =4.5v i d =20a v gs =10v i d =20a 25 c 125 c v ds =5v v gs =4.5v v gs =10v 0 20 40 60 80 100 0 1 2 3 4 5 i d (a) v ds (volts) figure 1: on-region characteristics (note e) v gs =2.5v 3v 4.5v 10v 3.5v d figure 3: on - resistance vs. drain current and gate voltage (note e) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c figure 4: on - resistance vs. junction temperature (note e) 0 2 4 6 8 2 4 6 8 10 r ds(on) (m w w w w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =20a 25 c 125 c AOI538 3 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
typical electrical and thermal characteristics 0 2 4 6 8 10 0 10 20 30 40 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 500 1000 1500 2000 2500 3000 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0 100 200 300 400 500 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) c oss c rss v ds =15v i d =20a t j(max) =175 c t c =25 c 10 m s 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) v > or equal to 4.5v 10 m s 1ms dc r ds(on) limited t j(max) =175 c t c =25 c 100 m s 10ms pulse width (s) figure 10: single pulse power rating junction-to- case (note f) 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 z q q q q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse v gs > or equal to 4.5v figure 9: maximum forward biased safe operating area (note f) r q jc =1.6 c/w AOI538 4 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
typical electrical and thermal characteristics 0 20 40 60 80 100 0 25 50 75 100 125 150 175 power dissipation (w) t case ( c) figure 12: power de-rating (note f) 0 20 40 60 80 100 0 25 50 75 100 125 150 175 current rating i d (a) t case ( c) figure 13: current de-rating (note f) 1 10 100 1000 10000 1e-05 0.001 0.1 10 1000 power (w) pulse width (s) t a =25 c 0.001 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 100 1000 z q q q q ja normalized transient thermal resistance pulse width (s) figure 15: normalized maximum transient thermal imp edance (note h) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse pulse width (s) figure 14: single pulse power rating junction-to-am bient (note h) r q ja =50 c/w AOI538 5 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
AOI538 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off l unclamped inductive switching (uis) test circuit & waveforms vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr 6 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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